8 citations · 15 across the 3 of their papers we have counts for
3 papers
Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka +5
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Gro…
4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +5
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two…
RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +3
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the…