Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates

Abstract

Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which enables high-speed electric measurements is important. Here we demonstrate RF-reflectometry in bilayer graphene devices. We utilize a micro graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance which degrades the RF-reflectometry. We measure the resonance properties of a tank circuit which contains the bilayer graphene device. We form RF-reflectmetory setup and compared the result with the DC measurement, and confirmed their consistency. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that RF-reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the research of bilayer graphene-based quantum devices by fast readout of the states.

16 pages, 5 figures

References in corpus (20)

• Boron nitride substrates for high-quality graphene electronics
• Quantum Computing
• Driven coherent oscillations of a single electron spin in a quantum dot
• Spin qubits in graphene quantum dots
• Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
• Fast Single-Charge Sensing with an rf Quantum Point Contact
• Tuning Energy Relaxation along Quantum Hall Channels
• Probing quantum devices with radio-frequency reflectometry
• Excited states in bilayer graphene quantum dots
• Radio-frequency detected fast charge sensing in undoped silicon quantum dots
• Spin-valley coupling in single-electron bilayer graphene quantum dots
• Time-resolved charge detection in graphene quantum dots
• Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology
• Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points
• Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime
• Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
• Dispersive sensing of charge states in a bilayer graphene quantum dot
• RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
• Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot
• Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Cited by in corpus (5)

• Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
• Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• Charge state estimation in quantum dots using a Bayesian approach
• Superconducting Cavity-Based Sensing of Band Gaps in 2D Materials