A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

Abstract

Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability.

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• Kondo enhancement of current induced spin accumulation in a quantum dot
• Experimental online quantum dots charge autotuning using neural networks
• Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
• Operating two exchange-only qubits in parallel
• A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
• Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
• Proximal quantum control of spin and spin ensemble with highly localized control field from skyrmions
• Theory on electron-phonon spin dehphasing in GaAs multi-electron double quantum dots
• Robust quantum dots charge autotuning using neural network uncertainty
• Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
• Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits
• Spin manipulation and spin dephasing in quantum dot integrated with a slanting magnetic field
• Quantum dots as optimized chiral emitters for photonic integrated circuits
• Wavelet correlation noise analysis for qubit operation variable time series
• Electron Charge Sensor with Hole Current Operating at Cryogenic Temperature
• Radiofrequency cascade readout of coupled spin qubits
• Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• Error Mitigation in Quantum Computers subject to Spatially Correlated Noise
• Few-electrode design for silicon MOS quantum dots
• A Theory of Direct Randomized Benchmarking
• A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise
• Stroboscopically Robust Gates For Capacitively Coupled Singlet-Triplet Qubits
• Photodriven germanium hole qubit
• Fast spin-valley-based quantum gates in Si with micromagnets
• Variational quantum compiling for three-qubit gates design in quantum dots
• Quantum Gates Between Mesoscopic Spin Ensembles
• Effect of device design on charge offset drift in Si/SiO${}_2$ single electron devices
• Electrical Interconnects for Silicon Spin Qubits
• Universal singlet-triplet qubits implemented near the transverse sweet spot
• Variability of hole spin qubits in planar Germanium
• A SWAP Gate for Spin Qubits in Silicon
• Charge state estimation in quantum dots using a Bayesian approach
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Spin-photon interaction in a nanowire quantum dot with asymmetrical confining potential
• Minimal Non-orthogonal Gate Decomposition for Qubits with Limited Control
• Hole spin splitting in a Ge quantum dot with finite barriers
• Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
• Measuring pulse heating in Si quantum dots with individual two-level fluctuators
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots
• Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
• Limitations of the $g$-tensor formalism of semiconductor spin qubits
• Transport-induced suppression of nuclear field fluctuations in multi-quantum-dot systems
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• Decoherence mitigation by real-time noise acquisition
• Enhanced Quantum Signal Control and Sensing Under Multicolored Noise via Generalized Filter Function Framework
• Electronic Correlations in Multielectron Silicon Quantum Dots
• Compilation Techniques for Spin Qubits in a Shuttling Bus Architecture
• Proposed Five-Electron Charge Quadrupole Qubit
• Intrinsic and induced quantum quenches for enhancing qubit-based quantum noise spectroscopy
• Protecting entanglement witnesses with randomized measurements
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
• Noise cross-correlations from single-shot measurements
• Designs for a two-dimensional Si quantum dot array with spin qubit addressability
• Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots
• Qubit decoherence under two-axis coupling to low-frequency noises
• Filter Function Formalism and Software Package to Compute Quantum Processes of Gate Sequences for Classical Non-Markovian Noise
• Electrical Control for Extension of Ramsey Spin Coherence Time of Ion-Implanted Nitrogen Vacancy Centers in diamond
• Non-Markovian Noise in Symmetry-Preserving Quantum Dynamics
• Dynamical nuclear spin polarization in a quantum dot with an electron spin driven by electric dipole spin resonance
• The Virtual Quantum Device (VQD): A tool for detailed emulation of quantum computers
• Enhanced local addressability of a spin array with local exchange pulses and global microwave driving
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
• Robust composite two-qubit gates for silicon-based spin qubits
• Nanoscale stray fields from micromagnets for optimal spin qubit architecture
• Quantum entanglement response to pulsed gate modulation
• Triple Antidot Molecules
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
• Robust shaped pulses for arrays of superconducting or semiconductor spin qubits with fixed Ising coupling
• Extending Qubit Coherence Time via Hybrid Dynamical Decoupling
• Robust iSWAP gates for semiconductor spin qubits with local driving
• Fault-Tolerant Encoding of Logical Qudits in Spin Systems
• Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots