Quantum transport properties of industrial ${}^{28}$Si/${}^{28}$SiO${}_2$

Abstract

We investigate the structural and quantum transport properties of isotopically enriched ${}^{28}$Si/${}^{28}$SiO${}_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times 10^{11}$ cm${}^{-2}$ and a peak mobility of 9800 cm${}^2$/Vs are measured at a temperature of 1.7 K. The ${}^{28}$Si/${}^{28}$SiO${}_2$ interface is characterized by a roughness of $\Delta =0.4$ nm and a correlation length of $\Lambda =3.4$ nm. An upper bound for valley splitting energy of 480 $\mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale ${}^{28}$Si/${}^{28}$SiO${}_2$ as a promising material platform to manufacture industrial spin qubits.

arXiv comment5 pages, 3 figures

References in corpus (21)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Storing quantum information for 30 seconds in a nanoelectronic device
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• Fidelity benchmarks for two-qubit gates in silicon
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• A Crossbar Network for Silicon Quantum Dot Qubits
• Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment
• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Electron spin decoherence in isotope-enriched silicon
• Spin lifetime and charge noise in hot silicon quantum dot qubits
• The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Valley splitting of single-electron Si MOS quantum dots
• 99.992 % ${}^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Spin relaxation and coherence times for electrons at the Si/SiO2 interface
• Quantum dots with split enhancement gate tunnel barrier control
• A low-disorder Metal-Oxide-Silicon double quantum dot

Cited by in corpus (20)

• Qubits made by advanced semiconductor manufacturing
• CMOS-based cryogenic control of silicon quantum circuits
• Quantum Dot Arrays in Silicon and Germanium
• Reducing charge noise in quantum dots by using thin silicon quantum wells
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
• Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
• Semiconductor materials stacks for quantum dot spin qubits
• Low disorder and high valley splitting in silicon
• Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
• Controllable freezing of the nuclear spin bath in a single-atom spin qubit
• Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Wafer-scale low-disorder 2DEG in ${}^{28}$Si/SiGe without an epitaxial Si cap
• Isotopic enrichment of silicon by high fluence ${}^{28}$Si${}^{-}$ ion implantation
• Valley splitting in silicon from the interference pattern of quantum oscillations
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
• Reducing disorder in Ge quantum wells by using thick SiGe barriers
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots