331 citations · 705 across the 8 of their papers we have counts for
8 papers
Spin qubit operations by conveyor-mode shuttling
M. De Smet, Y. Matsumoto, D. Fernández-Fernández +8
Dynamic qubit routing is emerging as a promising architectural path for semiconductor quantum processors. Charge carriers can be rapidly moved around on a chip using traveling-wave…
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
P. L. Bavdaz, H. G. J. Eenink, J. van Staveren +6
We demonstrate a 3636 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in qu…
High-fidelity two-qubit gates in silicon above one Kelvin
L. Petit, M. Russ, H. G. J. Eenink +4
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence tim…
Universal quantum logic in hot silicon qubits
L. Petit, H. G. J. Eenink, M. Russ +5
Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be p…
Quantum Dot Arrays in Silicon and Germanium
W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx +15
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become pract…
Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
H. G. J. Eenink, L. Petit, W. I. L. Lawrie +3
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one…
Quantum transport properties of industrial Si/SiO
D. Sabbagh, N. Thomas, J. Torres +21
We investigate the structural and quantum transport properties of isotopically enriched Si/SiO stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Hig…
Spin lifetime and charge noise in hot silicon quantum dot qubits
L. Petit, J. M. Boter, H. G. J. Eenink +10
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. W…