Qubits made by advanced semiconductor manufacturing

Abstract

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer

arXiv comment23 pages, 4 figures, 12 supplementary figures

References in corpus (46)

• Quantum Computation with Quantum Dots
• Surface codes: Towards practical large-scale quantum computation
• Spins in few-electron quantum dots
• Electron transport through double quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Silicon Quantum Electronics
• Randomized Benchmarking of Quantum Gates
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Dynamical decoupling and noise spectroscopy with a superconducting flux qubit
• A programmable two-qubit quantum processor in silicon
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• A CMOS silicon spin qubit
• 1/f noise: implications for solid-state quantum information
• Roads towards fault-tolerant universal quantum computation
• Quantum CNOT Gate for Spins in Silicon
• How to Enhance Dephasing Time in Superconducting Qubits
• Computing with spin qubits at the surface code error threshold
• Fast universal quantum control above the fault-tolerance threshold in silicon
• A four-qubit germanium quantum processor
• Silicon CMOS architecture for a spin-based quantum computer
• Quantum codes on a lattice with boundary
• Silicon quantum processor unit cell operation above one Kelvin
• Fidelity benchmarks for two-qubit gates in silicon
• Universal quantum logic in hot silicon qubits
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Gate count estimates for performing quantum chemistry on small quantum computers
• CMOS-based cryogenic control of silicon quantum circuits
• A Crossbar Network for Silicon Quantum Dot Qubits
• Precision tomography of a three-qubit donor quantum processor in silicon
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Two-axis control of a singlet-triplet qubit with an integrated micromagnet
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Spin lifetime and charge noise in hot silicon quantum dot qubits
• Quantum tomography of an entangled three-spin state in silicon
• Single-electron control in a foundry-fabricated two-dimensional qubit array
• Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
• Nanoscale broadband transmission lines for spin qubit control
• Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Charge detection in an array of CMOS quantum dots
• Quantum transport properties of industrial ${}^{28}$Si/${}^{28}$SiO${}_2$
• A Cryogenic Interface for Controlling Many Qubits
• Conditional Teleportation of Quantum-Dot Spin States

Cited by in corpus (57)

• Semiconductor Spin Qubits
• Computing with spin qubits at the surface code error threshold
• Universal control of a six-qubit quantum processor in silicon
• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Quantum error correction with silicon spin qubits
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Probing single electrons across 300 mm spin qubit wafers
• Universal logic with encoded spin qubits in silicon
• Direct manipulation of a superconducting spin qubit strongly coupled to a transmon qubit
• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• A single hole spin with enhanced coherence in natural silicon
• High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
• Roadmap for Unconventional Computing with Nanotechnology
• Reducing charge noise in quantum dots by using thin silicon quantum wells
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Multicore Quantum Computing
• High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing
• Colloquium: Advances in automation of quantum dot devices control
• Shuttling an electron spin through a silicon quantum dot array
• Low charge noise quantum dots with industrial CMOS manufacturing
• Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots
• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Semiconductor materials stacks for quantum dot spin qubits
• Variability of electron and hole spin qubits due to interface roughness and charge traps
• Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
• Indistinguishable photons from an artificial atom in silicon photonics
• Coherent control of electron spin qubits in silicon using a global field
• Electrical control of uniformity in quantum dot devices
• Coherent spin-valley oscillations in silicon
• Quantum control of hole spin qubits in double quantum dots
• Hole spin qubits in thin curved quantum wells
• Charge-noise induced dephasing in silicon hole-spin qubits
• Tuning arrays with rays: Physics-informed tuning of quantum dot charge states
• Flopping-mode spin qubit in a Si-MOS quantum dot
• Light-Hole Gate-Defined Spin-Orbit Qubit
• Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Feedback-based active reset of a spin qubit in silicon
• Compromise-Free Scaling of Qubit Speed and Coherence
• A quantum dot-based frequency multiplier
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
• Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control
• Modular nanomagnet design for spin qubits confined in a linear chain
• Designing globally optimal entangling gates using geometric space curves
• Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics
• Control of dephasing in spin qubits during coherent transport in silicon
• Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
• Gate reflectometry in dense quantum dot arrays
• A compact and versatile cryogenic probe station for quantum device testing
• Visual explanations of machine learning model estimating charge states in quantum dots
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• Intrinsic Noise of the Single Electron Box
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots