Control of dephasing in spin qubits during coherent transport in silicon

Abstract

One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors.

arXiv comment18 pages, 9 figures

References in corpus (54)

• Surface codes: Towards practical large-scale quantum computation
• Strong quantum computational advantage using a superconducting quantum processor
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Electron spin decoherence in quantum dots due to interaction with nuclei
• Decoherence in a superconducting quantum bit circuit
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• 1/f noise: implications for solid-state quantum information
• How to Enhance Dephasing Time in Superconducting Qubits
• High-fidelity readout and control of a nuclear spin qubit in silicon
• The Bloch Vector for N-Level Systems
• Charge noise and spin noise in a semiconductor quantum device
• Silicon CMOS architecture for a spin-based quantum computer
• Strong spin-photon coupling in silicon
• Fidelity benchmarks for two-qubit gates in silicon
• Qubits made by advanced semiconductor manufacturing
• Charge echo in a Cooper-pair box
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Strong Coupling of a Single Electron in Silicon to a Microwave Photon
• Coherent electronic transfer in quantum dot systems using adiabatic passage
• Long-Range Microwave Mediated Interactions Between Electron Spins
• Low-frequency charge noise in Si/SiGe quantum dots
• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Quantum State Transfer via Noisy Photonic and Phononic Waveguides
• Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
• Coherent shuttle of electron-spin states
• Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy
• Dephasing of Si spin qubits due to charge noise
• Probing low noise at the MOS interface with a spin-orbit qubit
• Coherent spin qubit transport in silicon
• Fast spin information transfer between distant quantum dots using individual electrons
• Spin-orbit coupling and operation of multi-valley spin qubits
• Coherent transfer of quantum information in silicon using resonant SWAP gates
• Single-electron control in a foundry-fabricated two-dimensional qubit array
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Efficient multiqubit entanglement via a spin-bus
• A silicon quantum-dot-coupled nuclear spin qubit
• Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Single to quadruple quantum dots with tunable tunnel couplings
• Exact Rotating Wave Approximation
• Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
• Electron g-factor of valley states in realistic silicon quantum dots
• Spin shuttling in a silicon double quantum dot
• Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
• The SMART protocol -- Pulse engineering of a global field for robust and universal quantum computation
• An electrically driven spin qubit based on valley mixing
• Coherent transfer of electron spin correlations assisted by dephasing noise
• Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
• Coherent spin-valley oscillations in silicon
• Simulated coherent electron shuttling in silicon quantum dots
• Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise
• Quantum state transfer via temporal kicking of information

Cited by in corpus (7)

• Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
• High-fidelity single-spin shuttling in silicon
• Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• Tunable Fano and Dicke effects in quantum transport of double quantum dots sandwiched between topological insulators
• Exploring Entanglement Spectrum and Phase Diagram in multi-electron Quantum Dot Chains