Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Abstract

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mu$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mu$m) is $(99.7\pm 0.3)\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in ${}^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

arXiv comment11 pages, 6 figures

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Cited by in corpus (29)

• The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
• Coherent spin qubit shuttling through germanium quantum dots
• Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
• Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
• High-fidelity single-spin shuttling in silicon
• Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
• Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
• Flying Spin Qubits in Quantum Dot Arrays Driven by Spin-Orbit Interaction
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
• Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
• Sensing dot with high output swing for scalable baseband readout of spin qubits
• Electron qubits surfing on acoustic waves: review of recent progress
• Compiling the surface code to crossbar spin qubit architectures
• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
• Single-shot latched readout of a quantum dot qubit using barrier gate pulsing
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Electrical Interconnects for Silicon Spin Qubits
• Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
• Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
• Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
• Spin qubit shuttling between coupled quantum dots with inhomogeneous Landé g-tensors
• Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
• Comparison of spin-qubit architectures for quantum error-correcting codes
• Coupling a ${}^{73}$Ge nuclear spin to an electrostatically defined quantum dot