activity
20202026
most citedConveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

106 citations · 342 across the 15 of their papers we have counts for

collaborators

16 papers

cond-mat.mes-hall2026

Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium

Alexei Orekhov, Wonjin Jang, Pan Zhang +13

Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf dr…

cond-mat.mes-hall2026

Engineering two-qubit gates via anisotropic exchange in germanium spin qubits

Leonardo Massai, Bence Hetényi, Eoin G. Kelly +14

Germanium hole spin qubits are a promising and versatile platform for quantum computation and simulation. In this system, strong spin-orbit interaction (SOI) renders the single-qub…

cond-mat.mes-hall2026

Disentangling orbital and confinement contributions to -factor in Ge/SiGe hole quantum dots

L. Sommer, I. Seidler, F. J. Schupp +12

Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling link…

cond-mat.mes-hall2026

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda +6

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…

cond-mat.mes-hall2025

Spatial uniformity of g-tensor and spin-orbit interaction in germanium hole spin qubits

Inga Seidler, Bence Hetényi, Lisa Sommer +12

Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and lar…

cond-mat.mes-hall2025

Resonant two-qubit gates for fermionic simulations with spin qubits

Konstantinos Tsoukalas, Alexei Orekhov, Bence Hetényi +15

In gate-defined semiconductor spin qubits, the highly tunable Heisenberg exchange interaction is leveraged to implement fermionic two-qubit gates such as CZ and SWAP. However, the…

cond-mat.mes-hall2025

Identification and mitigation of errors in hole spin qubit readout

Eoin Gerard Kelly, Leonardo Massai, Bence Hetényi +14

High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radiofrequency charge sensor with spin-to-charge conversion and Pauli spin blockad…

cond-mat.mes-hall2025★ 3 cited

A dressed singlet-triplet qubit in germanium

Konstantinos Tsoukalas, Uwe von Lüpke, Alexei Orekhov +15

In semiconductor hole spin qubits, low magnetic field () operation extends the coherence time () but proportionally reduces the gate speed. In contrast, singlet-…

cond-mat.mes-hall2024

Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots

Julian Ferrero, Thomas Koch, Sonja Vogel +7

Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still wide…

cond-mat.mes-hall2023★ 53 cited

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Ran Xue, Max Beer, Inga Seidler +6

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quan…

quant-ph2023★ 69 cited

The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling

Matthias Künne, Alexander Willmes, Max Oberländer +10

Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-cont…

cond-mat.mes-hall2023★ 5 cited

Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications

Inga Seidler, Malte Neul, Eugen Kammerloher +9

Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and opti…

cond-mat.mes-hall2022★ 72 cited

Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO

Veit Langrock, Jan A. Krzywda, Niels Focke +3

Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve…

cond-mat.mes-hall2021★ 106 cited

Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

Inga Seidler, Tom Struck, Ran Xue +4

Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttli…

cond-mat.mes-hall2021★ 7 cited

Sensing dot with high output swing for scalable baseband readout of spin qubits

Eugen Kammerloher, Andreas Schmidbauer, Laura Diebel +9

A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based q…

cond-mat.mes-hall2020★ 27 cited

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Frank Volmer, Inga Seidler, Timo Bisswanger +4

We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a…