A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

Abstract

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

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References in corpus (7)

• Quantum Computing
• Single-shot read-out of an individual electron spin in a quantum dot
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• The 3D transport diagram of a triple quantum dot
• Electrostically defined few-electron double quantum dot in silicon
• Spin filling of valley-orbit states in a silicon quantum dot
• Orbital and valley state spectra of a few-electron silicon quantum dot