A double quantum dot memristor

Abstract

Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design.

References in corpus (6)

• Memory effects in complex materials and nanoscale systems
• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Quantum Memristors
• Quantum Memristors with Superconducting Circuits
• Qubit-based memcapacitors and meminductors
• Charge State Hysteresis in Semiconductor Quantum Dots

Cited by in corpus (10)

• Correlation-induced refrigeration with superconducting single-electron transistors
• Solving the time-complexity problem and tuning the performance of quantum reservoir computing by artificial memory restriction
• Entangled Quantum Memristors
• Polariton-based quantum memristors
• Simulation of memristive synapses and neuromorphic computing on a quantum computer
• Thermometry and memcapacitance with qubit-resonator system
• Quantum Memristors with Quantum Computers
• Tuning spatial entanglement in interacting few-electron quantum dots
• Engineering Quantum Reservoirs through Krylov Complexity, Expressivity and Observability
• A Bayesian view of Single-Qubit Clocks, and an Energy versus Accuracy tradeoff