27 citations · 138 across the 9 of their papers we have counts for
9 papers
Deterministic nanofabrication for engineering nanowire quantum dot devices
Tarun Patel, Matteo Pennacchietti, Greg Holloway +8
Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Sit…
A double quantum dot memristor
Ying Li, Gregory W. Holloway, Simon C. Benjamin +3
Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we pr…
Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes
Kaveh Gharavi, Gregory W. Holloway, Ray R. LaPierre +1
The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies are o…
Electrical characterization of chemical and dielectric passivation of InAs nanowires
Gregory W. Holloway, Chris M. Haapamaki, Paul Kuyanov +2
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devic…
Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction
Kaveh Gharavi, Gregory W. Holloway, Chris M. Haapamaki +4
The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase cohe…
Magnetoconductance signatures of subband structure in semiconductor nanowires
Gregory W. Holloway, Daryoush Shiri, Chris M. Haapamaki +4
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic fiel…
Trapped charge dynamics in InAs nanowires
Gregory W. Holloway, Yipu Song, Chris M. Haapamaki +2
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are…
Temperature-dependent electron mobility in InAs nanowires
Nupur Gupta, Yipu Song, Gregory W. Holloway +4
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with te…
Electron Transport in InAs-InAlAs Core-Shell Nanowires
Gregory W. Holloway, Yipu Song, Chris M. Haapamaki +2
Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for b…