Electron Transport in InAs-InAlAs Core-Shell Nanowires

Abstract

Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states.

12 pages, 4 figures; newest version has reference numbers corrected

References in corpus (4)

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Spin-orbit qubit in a semiconductor nanowire
• Gate capacitance of back-gated nanowire field-effect transistors
• Structural Investigation of InAs-AlInAs and InAs-AlInP Core-Shell Nanowires

Cited by in corpus (6)

• Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
• Temperature-dependent electron mobility in InAs nanowires
• Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes
• InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
• Electrical characterization of chemical and dielectric passivation of InAs nanowires
• Magnetoconductance signatures of subband structure in semiconductor nanowires