activity
20112016
most citedElectrical characterization of chemical and dielectric passivation of InAs nanowires

16 citations · 35 across the 4 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2016★ 16 cited

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Gregory W. Holloway, Chris M. Haapamaki, Paul Kuyanov +2

The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devic…

cond-mat.mes-hall2014★ 1 cited

Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction

Kaveh Gharavi, Gregory W. Holloway, Chris M. Haapamaki +4

The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase cohe…

cond-mat.mes-hall2014★ 3 cited

Sensitive Magnetic Force Detection with a Carbon Nanotube Resonator

Kyle Willick, Chris Haapamaki, Jonathan Baugh

We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated b…

cond-mat.mes-hall2013★ 15 cited

Magnetoconductance signatures of subband structure in semiconductor nanowires

Gregory W. Holloway, Daryoush Shiri, Chris M. Haapamaki +4

The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic fiel…

cond-mat.mes-hall2012

Trapped charge dynamics in InAs nanowires

Gregory W. Holloway, Yipu Song, Chris M. Haapamaki +2

We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are…

cond-mat.mes-hall2012

Temperature-dependent electron mobility in InAs nanowires

Nupur Gupta, Yipu Song, Gregory W. Holloway +4

Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with te…