77 citations · 324 across the 15 of their papers we have counts for
17 papers
Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
Spencer McDermott, Trevor R. Smith, Ray R. LaPierre +1
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepi…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Efficient Wave Optics Modeling of Nanowire Solar Cells Using Rigorous Coupled Wave Analysis
Kyle W. Robertson, Ray R. LaPierre, Jacob J. Krich
We investigate the accuracy of rigorous coupled wave analysis (RCWA) for near-field computations within cylindrical GaAs nanowire solar cells and discover excellent accuracy with l…
Stacking defects in GaP nanowires: Electronic structure and optical properties
Divyanshu Gupta, Nebile Isik Goktas, Amit Rao +2
Formation of twin boundaries during the growth of semiconductor nanowires is very common. However, the effects of such planar defects on the electronic and optical properties of na…
Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes
Kaveh Gharavi, Gregory W. Holloway, Ray R. LaPierre +1
The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies are o…
Electrical characterization of chemical and dielectric passivation of InAs nanowires
Gregory W. Holloway, Chris M. Haapamaki, Paul Kuyanov +2
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devic…