InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
arXiv:1601.01149 · doi:10.1103/PhysRevApplied.6.054017
Abstract
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.
arXiv comment16 pages, 6 figures, 1 table
References in corpus (23)
- Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
- Helical liquids and Majorana bound states in quantum wires
- Evidence of Majorana fermions in an Al - InAs nanowire topological superconductor
- Exponential Protection of Zero Modes in Majorana Islands
- Spin-orbit qubit in a semiconductor nanowire
- Spin-resolved Andreev levels and parity crossings in hybrid superconductor-semiconductor nanostructures
- Epitaxy of Semiconductor-Superconductor nanowires
- Tunable Supercurrent Through Semiconductor Nanowires
- Supercurrent reversal in quantum dots
- Hard gap in epitaxial semiconductor-superconductor nanowires
- Zero-bias anomaly in a nanowire quantum dot coupled to superconductors
- Gate capacitance of back-gated nanowire field-effect transistors
- Hybrid single-electron transistor as a source of quantized electric current
- Parity lifetime of bound states in a proximitized semiconductor nanowire
- Tunneling Spectroscopy of Quasiparticle Bound States in a Spinful Josephson Junction
- Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors
- Correlating the nanostructure and electronic properties of InAs nanowires
- Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots
- A simple and controlled single electron transistor based on doping modulation in silicon nanowires
- Non-adiabadic charge pumping in a hybrid SET transistor
- Real-time observation of discrete Andreev tunneling events
- Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices
- Electron Transport in InAs-InAlAs Core-Shell Nanowires