12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Abstract

Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes.

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• Universal control of a six-qubit quantum processor in silicon
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• Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
• Towards scalable silicon quantum computing
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Cited by in corpus (20)

• A two-dimensional 10-qubit array in germanium with robust and localised qubit control
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• A spinless spin qubit
• A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
• Operating two exchange-only qubits in parallel
• Mitigation of exchange cross-talk in dense quantum dot arrays
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• Singlet-only Always-on Gapless Exchange Qubits with Baseband Control
• Spin-qubit readout analysis based on a hidden Markov model
• Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates
• Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices
• Limitations of the $g$-tensor formalism of semiconductor spin qubits
• Harnessing subspace controllability: Dynamical generation of Dicke states in Heisenberg-coupled qubit arrays with a single local control
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Phonon-induced frequency shift in semiconductor spin qubits
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
• Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout