A two-dimensional 10-qubit array in germanium with robust and localised qubit control
arXiv:2412.16044 · doi:10.1038/s41467-025-65577-3
Abstract
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.
10 pages, 3 figures
References in corpus (29)
- Randomized Benchmarking of Quantum Gates
- Coherent control of a single electron spin with electric fields
- Universal control of a six-qubit quantum processor in silicon
- A four-qubit germanium quantum processor
- The germanium quantum information route
- Electric Dipole Induced Spin Resonance in Quantum Dots
- Spin relaxation and decoherence of holes in quantum dots
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Electrical spin driving by -matrix modulation in spin-orbit qubits
- A single hole spin with enhanced coherence in natural silicon
- Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
- Pauli spin blockade in weakly coupled quantum dots
- Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
- Operating semiconductor quantum processors with hopping spins
- Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
- Hole spin driving by strain-induced spin-orbit interactions
- Electric-field control and noise protection of the flopping-mode spin qubit
- Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
- 12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line
- Germanium wafers for strained quantum wells with low disorder
- Electron spin coherence of shallow donors in natural and isotopically enriched germanium
- Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
- Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
- Geometry of the dephasing sweet spots of spin-orbit qubits
- Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
- Compromise-Free Scaling of Qubit Speed and Coherence
- Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells
- Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance
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- Variability of hole spin qubits in planar Germanium
- Photon-mediated entanglement between spin qubits beyond the dispersive regime
- Spin qubit shuttling between coupled quantum dots with inhomogeneous Landé g-tensors
- Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
- Color it, Code it, Cancel it: k-local dynamical decoupling from classical additive codes