Hole spin driving by strain-induced spin-orbit interactions

Abstract

Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as $3\times 10^{-6}$ nm${}^{-1}$ within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics.

19 pages, 3 figures

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• Tunable hole spin-photon interaction based on g-matrix modulation
• Hole spin qubits in thin curved quantum wells
• The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium
• Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode

Cited by in corpus (34)

• Operating semiconductor quantum processors with hopping spins
• Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• A singlet-triplet hole-spin qubit in MOS silicon
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• High-fidelity spin qubit shuttling via large spin-orbit interaction
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Valley-Free Silicon Fins Caused by Shear Strain
• A two-dimensional 10-qubit array in germanium with robust and localised qubit control
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Modelling of planar germanium hole qubits in electric and magnetic fields
• Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling
• A spinless spin qubit
• Optimal operation of hole spin qubits
• Protocols to measure the non-Abelian Berry phase by pumping a spin qubit through a quantum-dot loop
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Theory of superconducting proximity effect in hole-based hybrid semiconductor-superconductor devices
• Photodriven germanium hole qubit
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Variability of hole spin qubits in planar Germanium
• Hole spin splitting in a Ge quantum dot with finite barriers
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Role of anisotropic confining potential and elliptical driving in dynamics of a Ge hole qubit
• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects
• Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
• Switchable spin-photon coupling with hole spins in single-quantum dots