SiGe quantum dots for fast hole spin Rabi oscillations

Abstract

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

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Cited by in corpus (31)

• The germanium quantum information route
• Ge hole spin qubit
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Heavy hole states in Germanium hut wires
• Majorana Fermions in Ge/Si Hole Nanowires
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Hole spin driving by strain-induced spin-orbit interactions
• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots
• SiGe quantum dots for fast hole spin Rabi oscillations
• Hole spin manipulation in inhomogeneous and non-separable electric fields
• Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
• Tunable hole spin-photon interaction based on g-matrix modulation
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Hole spin qubits in thin curved quantum wells
• Majorana zero modes in gate-defined germanium hole nanowires
• Phase driving hole spin qubits
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Majorana bound states in germanium Josephson junctions via phase control
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
• Hole weak anti-localization in a strained-Ge surface quantum well
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Probing details of spin--orbit coupling through Pauli spin blockade
• High-efficiency microwave photodetection by cavity coupled double dots with single cavity-photon sensitivity
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control