Hole weak anti-localization in a strained-Ge surface quantum well
arXiv:1704.02879 · doi:10.1063/1.4997411
Abstract
We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field, and hence to the carrier density. By fitting the weak anti-localization peak to a model including a dominant cubic spin-orbit coupling, we extract the characteristic transport time scales and a spin splitting energy of ~1 meV. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and attribute this finding to a combined effect of surface roughness, Zeeman splitting, and virtual occupation of higher-energy hole subbands.
References in corpus (25)
- Silicon Quantum Electronics
- Coherent control of a single electron spin with electric fields
- A CMOS silicon spin qubit
- Weak Antilocalization and Spin Precession in Quantum Wells
- Electric Dipole Induced Spin Resonance in Quantum Dots
- Ge/Si nanowire mesoscopic Josephson junctions
- Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson elements
- Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
- Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys
- Hole spin dephasing time associated to hyperfine interaction in quantum dots
- Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
- Spin-Orbit Coupling, Antilocalization, and Parallel Magnetic Fields in Quantum Dots
- Spin Splitting in Symmetrical SiGe Quantum Wells
- Gatemon Benchmarking and Two-Qubit Operation
- Heavy hole states in Germanium hut wires
- Majorana Fermions in Ge/Si Hole Nanowires
- Spin Orientation of Holes in Quantum Wells
- On the nature of tunable hole g-factors in quantum dots
- Weak antilocalization in quantum wells in tilted magnetic fields
- Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
- Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
- SiGe quantum dots for fast hole spin Rabi oscillations
- Spinless composite fermions in an ultra-high quality strained Ge quantum well
- Quantum transport in parallel magnetic fields: A realization of the Berry-Robnik symmetry phenomenon
- High critical magnetic field superconducting contacts to Ge/Si core/shell nanowires
Cited by in corpus (5)
- The germanium quantum information route
- Germanium quantum well Josephson field effect transistors and interferometers
- Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
- Majorana zero modes in gate-defined germanium hole nanowires
- Majorana bound states in germanium Josephson junctions via phase control