On the nature of tunable hole g-factors in quantum dots

Abstract

Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50's, this mechanism of g-factor control has been largely overlooked in the literature.

arXiv comment9 pages, 6 figures

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• Coherent control of a single electron spin with electric fields
• Spin-orbit qubit in a semiconductor nanowire
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• The g-factors of discrete levels in nanoparticles
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• A single hole spin with enhanced coherence in natural silicon
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• Majorana Fermions in Ge/Si Hole Nanowires
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• Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
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• SiGe quantum dots for fast hole spin Rabi oscillations
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Giant g factor tuning of long-lived electron spins in Ge
• Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• A singlet-triplet hole-spin qubit in MOS silicon
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• Charge-noise induced dephasing in silicon hole-spin qubits
• Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots
• Magnetic impurities in spin-split superconductors
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• Electrical control of spins and giant g-factors in ring-like coupled quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
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• Topology driven g-factor tuning in type-II quantum dots
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• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits
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• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• InP/GaSb core-shell nanowires: a novel hole-based platform with strong spin-orbit coupling for full-shell hybrid devices
• Depletion-mode Quantum Dots in Intrinsic Silicon
• Optimal operation of hole spin qubits
• Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots
• Theory of superconducting proximity effect in hole-based hybrid semiconductor-superconductor devices
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Incorporation of random alloy GaBi${}_x$As${}_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling