Observation of spin-selective tunneling in SiGe nanocrystals

Abstract

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

8 pages, 5 figures

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• On the nature of tunable hole g-factors in quantum dots
• Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
• Hole spin manipulation in inhomogeneous and non-separable electric fields
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
• Hyperfine interactions in two-dimensional HgTe topological insulators
• Tunable hole spin-photon interaction based on g-matrix modulation
• A phonon laser utilizing quantum-dot spin states
• Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots
• Zero field splitting of heavy-hole states in quantum dots
• Geometry of the dephasing sweet spots of spin-orbit qubits
• All electrically controlled quantum gates for single heavy hole spin qubits
• Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
• Interplay of Coulomb interaction and spin-orbit effects in multi-level quantum dots
• Magnetic anisotropies of quantum dots
• Spin-orbit coupled particle in a spin bath
• Cotunneling renormalization in carbon nanotube quantum dots