Lateral Spin Injection in Germanium Nanowires

Abstract

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin diffusion theory, indicates that the spin diffusion length is larger than 100 μm in germanium nanowires at 4.2 K.

References in corpus (10)

• Spintronics: Fundamentals and applications
• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Non-ballistic spin field-effect transistor
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Electronic spin drift in graphene field effect transistors
• Suppression of Spin Relaxation in Submicron InGaAs Wires
• Semiconductors between spin-polarized source and drain
• Performance of a spin-based insulated gate field effect transistor
• Spin accumulation probed in multiterminal lateral all-metallic devices

Cited by in corpus (8)

• Optical spin injection and spin lifetime in Ge heterostructures
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Electrical spin injection and detection in Germanium using three terminal geometry
• Anisotropy-driven spin relaxation in germanium
• Observation of spin-selective tunneling in SiGe nanocrystals
• Non-local opto-electrical spin injection and detection in germanium at room temperature
• Optical spin orientation and depolarization in Ge