11.3k citations · 12.6k across the 7 of their papers we have counts for
7 papers
Wireless Avionics Intra-Communications: A Survey of Benefits, Challenges, and Solutions
Pangun Park, Piergiuseppe Di Marco, Junghyo Nah +1
In the aeronautics industry, wireless avionics intra-communications have a tremendous potential to improve efficiency and flexibility while reducing the weight, fuel consumption, a…
Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors
Junghyo Nah, S. Bala Kumar, Hui Fang +6
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are s…
Coulomb Drag of Massless Fermions in Graphene
Seyoung Kim, Insun Jo, Junghyo Nah +3
Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of mass…
Lateral Spin Injection in Germanium Nanowires
En-Shao Liu, Junghyo Nah, Kamran M. Varahramyan +1
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based de…
Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors
Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan +3
We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their…
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li, Weiwei Cai, Jinho An +10
Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced most…
Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
Seyoung Kim, Junghyo Nah, Insun Jo +5
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atom…