Electronic spin drift in graphene field effect transistors

Abstract

We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n\simeq 3.5\times 10^{16}$ m${}^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

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References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Graphene Spin Transistor
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Spin Injection into a Graphene Thin Film at Room Temperature

Cited by in corpus (5)

• Density-Functional Theory of Graphene Sheets
• Electronic properties of graphene and graphene nanoribbons with "pseudo-Rashba" spin-orbit coupling
• Dirac electrons in graphene-based quantum wires and quantum dots
• Long range Josephson coupling through ferromagnetic graphene
• Spin currents and magnetoresistance of graphene-based magnetic junctions