activity
20002012
most citedA new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

384 citations · 1.6k across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mes-hall2012★ 65 cited

Enhancement of spin relaxation time in hydrogenated graphene spin valve devices

M. Wojtaszek, I. J. Vera-Marun, T. Maassen +1

Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^…

cond-mat.mes-hall2012★ 62 cited

Localized states influence spin transport in epitaxial graphene

T. Maassen, J. J. van den Berg, E. H. Huisman +4

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spi…

cond-mat.mes-hall2011★ 384 cited

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

P. J. Zomer, S. P. Dash, N. Tombros +1

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at…

cond-mat.mes-hall2008★ 33 cited

Electrical detection of spin pumping: dc voltage generated by ferromagnetic resonance at ferromagnet/nonmagnet contact

M. V. Costache, S. M. Watts, C. H. van der Wal +1

We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-…

cond-mat.mes-hall2008★ 73 cited

Single atom adhesion in optimized gold nanojunctions

M. L. Trouwborst, E. H. Huisman, F. L. Bakker +2

We study the interaction between single apex atoms in a metallic contact, using the break junction geometry. By carefully 'training' our samples, we create stable junctions in whic…

cond-mat.mes-hall2008★ 166 cited

Electronic spin drift in graphene field effect transistors

C. Jozsa, M. Popinciuc, N. Tombros +2

We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the meta…