Enhancement of spin relaxation time in hydrogenated graphene spin valve devices

Abstract

Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature.

References in corpus (11)

• The Raman Fingerprint of Graphene
• Control of graphene's properties by reversible hydrogenation
• Magnetism in Graphene Induced by Single-Atom Defects
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
• Spin transport in high quality suspended graphene devices
• Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
• Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy
• Localized states influence spin transport in epitaxial graphene

Cited by in corpus (14)

• Graphene Spintronics
• Spin-Orbit Proximity Effect in Graphene
• Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
• Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
• Localized states influence spin transport in epitaxial graphene
• Revisiting the measurement of the spin relaxation time in graphene-based devices
• Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
• Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
• Spin relaxation related to the edge scattering in graphene
• Pure Spin Current Injection in Hydrogenated Graphene Structures
• Enhanced spin injection in molecularly functionalized graphene via ultra-thin oxide barriers
• Proximity Effect of Epitaxial Iron Phthalocyanine Molecules on High-Quality Graphene Devices
• Introduction of spin-orbit interaction into graphene with hydrogenation
• Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride