Absence of a giant spin Hall effect in plasma-hydrogenated graphene
arXiv:1809.10475 · doi:10.1103/PhysRevB.99.085401
Abstract
The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hydrogenated graphene in the H-bar method and by direct measurements of the inverse SHE. Although a large nonlocal resistance can be observed in the H-bar structure, comparison with the results of the other method indicate that this nonlocal resistance is caused by a non-spin-related origin.
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- Control of Spin Diffusion and Suppression of the Hanle Effect by the Coexistence of Spin and Valley Hall Effects
- Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
- Origins of Valley Current Reversal in Partially Overlapped Graphene Layers