Symmetry breaking effects on spin and electronic transport in graphene

Abstract

The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects that enhance spin-orbit interactions, while conserving the electronic total angular momentum. We show that the appearance and dominance of skew scattering, and the related observation of valley and/or spin Hall effect in decorated graphene samples, suggests the set of symmetries that adatom perturbations should satisfy. We further show that detailed measurements of the transport and elastic times as a function of carrier concentration make it possible to not only extract the strength of the spin-orbit interaction, as suggested before, but also obtain the amplitude of the symmetry-breaking terms introduced. To examine how different terms would affect measurements, we also present calculations for typical random distributions of impurities with different perturbations, illustrating the detailed energy dependence of different observables

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• Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures
• Fundamental limits to near-field optical response, over any bandwidth
• Mass inversion in graphene by proximity to dichalcogenide monolayer
• Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
• Absence of a giant spin Hall effect in plasma-hydrogenated graphene
• Non-Equilibrium RKKY Interaction in Irradiated Graphene
• Topological phases and twisting of graphene on a dichalcogenide monolayer
• Proximity-induced topological phases in bilayer graphene
• Symmetry-protected coherent transport for diluted vacancies and adatoms in graphene
• Crossover to the Anomalous Quantum Regime in the Extrinsic Spin Hall Effect of Graphene
• Minimal Geometry for Valley Filtering in Graphene
• Valley current generation using biased bilayer graphene dots
• Kekulé Induced Valley Birefringence and Skew Scattering in Graphene
• Graphene-based spin switch device via modulated Rashba field and strain
• Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures
• Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor
• Electron Scattering in 2D Semiconductors: Contrasting Dirac and Schrödinger Behavior
• Photo-induced Multiply Quantized Vortex States in Dirac-like Materials