Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures
arXiv:1806.11469 · doi:10.1002/9781119468455.ch39
Abstract
Graphene/MoS2 heterostructures are formed by combining the nanosheets of graphene and monolayer MoS2. The electronic features of both constituent monolayers are rather well-preserved in the resultant heterostructure due to the weak van der Waals interaction between the layers. However, the proximity of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in graphene, which is nearly three orders of magnitude larger than the intrinsic spin orbit coupling of pristine graphene. This opens a bandgap in graphene and further causes anticrossings of the spin-nondegenerate bands near the Dirac point. Lattice incommensurate graphene/MoS2 heterostructure exhibits interesting moire' patterns which have been observed in experiments. The electronic bandstructure of heterostructure is very sensitive to biaxial strain and interlayer twist. Although the Dirac cone of graphene remains intact and no charge-transfer between graphene and MoS2 layers occurs at ambient conditions, a strain-induced charge-transfer can be realized in graphene/MoS2 heterostructure. Application of a gate voltage reveals the occurrence of a topological phase transition in graphene/MoS2 heterostructure. In this chapter, we discuss the crystal structure, interlayer effects, electronic structure, spin states, and effects due to strain and substrate proximity on the electronic properties of graphene/MoS2 heterostructure. We further present an overview of the distinct topological quantum phases of graphene/MoS2 heterostructure and review the recent advancements in this field.
arXiv comment31 pages, 12 figures
References in corpus (53)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Van der Waals heterostructures
- Quantum Spin Hall Effect in Graphene
- Berry Phase Effects on Electronic Properties
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Van der Waals density functionals applied to solids
- Control of valley polarization in monolayer MoS2 by optical helicity
- A Higher-Accuracy van der Waals Density Functional
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Mixed-Dimensional van der Waals Heterostructures
- Graphene Spintronics
- A tight-binding approach to uniaxial strain in graphene
- Polaritons in layered 2D materials
- Local strain engineering in atomically thin MoS2
- Asymmetry gap in the electronic band structure of bilayer graphene
- Strong light-matter coupling in two-dimensional atomic crystals
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Effects of Strain on Electronic Properties of Graphene
- Spin-Orbit Proximity Effect in Graphene
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS
- Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics
- Strain-dependent modulation of conductivity in single layer transition-metal dichalcogenides
- Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
- Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
- Graphene Versus MoS2: a Short Review
- Giant tunable Rashba spin splitting in two-dimensional BiSb monolayer and BiSb/AlN heterostructures
- Microscopic theory of quantum anomalous Hall effect in graphene
- Band offset and negative compressibility in graphene-MoS2 heterostructures
- First-principles investigation of graphene/MoS2 bilayer heterostructures using Tkatchenko-Scheffler van der Waals method
- First-principles study of two-dimensional van der Waals heterojunctions
- Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS
- Atlas for the properties of elemental 2D metals
- Doping Mechanisms in Graphene-MoS2 Hybrids
- The two-dimensional Brillouin zone of uniaxially strained graphene
- Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS and WS
- MoS2: a Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene
- Impact of strain on the optical fingerprint of monolayer transition metal dichalcogenides
- Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
- Prediction of a controllable Weyl semi-metallic phase in inversion-asymmetric BiSb
- Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field
- Mass inversion in graphene by proximity to dichalcogenide monolayer
- Topological edge states and quantum Hall effect in the Haldane model
- Spin Orbit Interaction and Isotropic Electronic Transport in Graphene
- Edge states in dichalcogenide nanoribbons and triangular quantum dots
- Symmetry breaking effects on spin and electronic transport in graphene
- Excitonic mass gap in uniaxially strained graphene