Local strain engineering in atomically thin MoS2

Abstract

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

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References in corpus (14)

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• Valley polarization in MoS2 monolayers by optical pumping
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• Elastic properties of freely suspended MoS2 nanosheets
• All-graphene integrated circuits via strain engineering
• Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• Large and tunable photo-thermoelectric effect in single-layer MoS2
• Effect of spin-orbit interaction on the excitonic effects in single-layer, double-layer, and bulk MoS2
• Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• Optical identification of atomically thin dichalcogenide crystals

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• PhD Thesis: Electronic correlations in multiorbital systems