Excitons and stacking order in h-BN
arXiv:1401.1948 · doi:10.1021/ph500141j
Abstract
The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.
References in corpus (7)
- Multiply Folded Graphene
- Defect-related photoluminescence of hexagonal boron nitride
- Coupling of excitons and defect states in boron-nitride nanostructures
- Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
- Second Harmonic Generation in h-BN and MoS monolayers: the role of electron-hole interaction
- Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation
- Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
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- Band gap measurements of monolayer h-BN and insights into carbon-related point defects
- Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation
- Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
- Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure
- Excitons in van der Waals materials: from monolayer to bulk hexagonal boron nitride
- Angular resolved electron energy loss spectroscopy in hexagonal boron nitride
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- Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
- Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers
- Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
- Solitons in binary compounds with stacked two-dimensional honeycomb lattices
- Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
- Substitutional oxygen as the origin of the 3.5 eV luminescence in hexagonal boron nitride
- Electronic structure of folded hexagonal boron nitride