Second Harmonic Generation in h-BN and MoS${}_2$ monolayers: the role of electron-hole interaction

Abstract

In this letter we show by means of first principle numerical simulations that electron-hole interaction significantly contributes to the second-harmonic generation spectrum of h-BN or MoS${}_2$ monolayers. Specifically, it doubles the signal intensity at the excitonic resonances with respect to the contribution from independent electronic transitions. This result hints that the intensity of second-harmonic signal of those materials can be tuned by changing the dielectric screening, that controls the strength of the electron-hole interaction.

4 pages, 2 figures

References in corpus (1)

• Nonlinear optics from an ab-initio approach by means of the dynamical Berry phase: Application to second- and third-harmonic generation in semiconductors

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