Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
arXiv:0707.0599 · doi:10.1063/1.2821413
Abstract
The excitonic recombinations in hexagonal boron nitride (hBN) are investigated with spatially resolved cathodoluminescence spectroscopy in the UV range. Cathodoluminescence images of an individual hBN crystallite reveals that the 215 nm free excitonic line is quite homogeneously emitted along the crystallite whereas the 220 nm and 227 nm excitonic emissions are located in specific regions of the crystallite. Transmission electron microscopy images show that these regions contain a high density of crystalline defects. This suggests that both the 220 nm and 227 nm emissions are produced by the recombination of excitons bound to structural defects.
References in corpus (3)
Cited by in corpus (25)
- Hexagonal boron nitride is an indirect bandgap semiconductor
- Atomically Thin Boron Nitride: Unique Properties and Applications
- Defect-related photoluminescence of hexagonal boron nitride
- Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
- Coupling of excitons and defect states in boron-nitride nanostructures
- Single photon emitters in hexagonal boron nitride: A review of progress
- Excitons and stacking order in h-BN
- Near band gap photoluminescence properties of hexagonal boron nitride
- Excitons in boron nitride single layer
- Excitonic recombinations in hBN: from bulk to exfoliated layers
- Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation
- Exciton-phonon coupling in the UV absorption and emission spectra of bulk hexagonal boron nitride
- Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
- Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
- Photoluminescent properties of the carbon-dimer defect in hexagonal boron-nitride: a many-body finite-size cluster approach
- Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride
- Angular resolved electron energy loss spectroscopy in hexagonal boron nitride
- Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride
- Exciton interference in hexagonal boron nitride
- Photoluminescence properties of pyrolytic boron nitride
- Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes
- Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
- Exciton-exciton annihilation in hBN
- Solitons in binary compounds with stacked two-dimensional honeycomb lattices
- Phonon assisted light absorption and emission in cubic-Boron Nitride