Exciton-exciton annihilation in hBN

Abstract

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2$\times$10${}^{-6}$ cm${}^3$.s${}^{-1}$ at $T=10$ K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probablly contributes to the luminescence quenching observed in low-dimensionality BN materials.

References in corpus (12)

• Van der Waals heterostructures
• Boron nitride substrates for high-quality graphene electronics
• Hexagonal boron nitride is an indirect bandgap semiconductor
• Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
• Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
• Excitons in boron nitride nanotubes: dimensionality effects
• Nonlinear Photoluminescence in Atomically Thin Layered WSe2 Arising from Diffusion-Assisted Exciton-Exciton Annihilation
• Bright luminescence from indirect and strongly bound excitons in hBN
• Bose-Einstein Condensation of Excitons in Cu${}_2$O: Progress Over Thirty Years
• Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
• Excitonic recombinations in hBN: from bulk to exfoliated layers
• A graphene Zener-Klein transistor cooled by a hyperbolic substrate

Cited by in corpus (2)

• Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
• Radiative lifetime of free excitons in hexagonal boron nitride