Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
arXiv:2305.09952 · doi:10.1038/s41598-023-50502-9
Abstract
Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, such as transition metal dichalcogenides and hexagonal boron nitride (hBN), have been difficult due to the small excitation volume that interacts with high-energy electron beams (e-beams). Herein, distinct CL signals from a monolayer hBN, namely mBN, epitaxial film grown on a highly oriented pyrolytic graphite substrate are shown by using a home-made CL system capable of large-area and surface-sensitive excitation by an e-beam. The spatially resolved CL spectra at 13 K exhibited a predominant 5.5-eV emission band, which has been ascribed to originate from multilayered aggregates of hBN, markedly at thicker areas formed on the step edges of the substrate. Conversely, a faint peak at 6.04 eV was routinely observed from atomically flat areas. Since the energy agreed with the PL peak of 6.05 eV at 10 K that has been assigned as being due to the recombination of phonon-assisted direct excitons of mBN by Elias et al. [Nat. Commun. 10, 2639 (2019)], the CL peak at 6.04 eV is attributed to originate from the mBN epilayer. The CL results support the transition from indirect bandgap in bulk hBN to direct bandgap in mBN, in analogy with molybdenum disulfide. The results also encourage to elucidate emission properties of other low-dimensional materials with reduced excitation volumes by using the present CL configuration.
arXiv comment7 pages, 3 figures
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