activity
20212026
most citedPurcell enhancement of silicon W centers in circular Bragg grating cavities

19 citations · 56 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.other2026

Spontaneous emission of light by non-equilibrium phonons

J. Plo, P. Valvin, M. Moret +8

When a system is brought out of equilibrium by an external excitation, its relaxation to thermodynamic equilibrium generates phonons. These non-equilibrium phonons degrade via casc…

physics.optics2026

In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission

Jiyun Kim, Nika Teran, Juliette Plo +8

Hexagonal boron nitride (hBN) has emerged as a leading host for optically active quantum defects. Yet introduction of specific impurity species other than carbon remains unexplored…

quant-ph2026

Optical detection of the electron spin resonances of G centers in silicon

Félix Cache, Krithika V. R., Tobias Herzig +8

Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…

quant-ph2025

A single optically detectable tumbling spin in silicon

Félix Cache, Yoann Baron, Baptiste Lefaucher +9

We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystallin…

cond-mat.mtrl-sci2025

Growth of rhombohedral boron nitride crystals using an iron flux

W. Desrat, M. Moret, J. Plo +7

We report the growth of high quality rhombohedral boron nitride (rBN) crystals by the iron flux method at atmospheric pressure. In contrast to the lamellar structure of standard he…

cond-mat.mtrl-sci2025

Spin defects in hexagonal boron nitride as two-dimensional strain sensors

Z. Mu, Z. Zhang, J. Fraunié +5

Lattice deformation is a powerful way to engineer the properties of two-dimensional (2D) materials, making their precise measurement an important challenge for both fundamental sci…

cond-mat.mtrl-sci2024★ 1 cited

Growth of hexagonal BN crystals by traveling-solvent floating zone

Eli Zoghlin, Juliette Plo, Gaihua Ye +11

Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-r…

quant-ph2024★ 7 cited

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Alrik Durand, Yoann Baron, Péter Udvarhelyi +15

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…

cond-mat.mtrl-sci2024

Layer-by-layer connection for large area single crystal boron nitride multilayer films

Hui Shi, Mingyuan Wang, Hongying Chen +14

Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small s…

quant-ph2024★ 16 cited

Genuine and faux single G centers in carbon-implanted silicon

Alrik Durand, Yoann Baron, Félix Cache +12

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…

physics.optics2023★ 19 cited

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Baptiste Lefaucher, Jean-Baptiste Jager, Vincent Calvo +11

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artifici…

cond-mat.mtrl-sci2023★ 13 cited

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

K. Shima, T. S. Cheng, C. J. Mellor +7

Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from…

quant-ph2023

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

P. Udvarhelyi, T. Clua-Provost, A. Durand +6

The boron-vacancy spin defect () in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly p…

cond-mat.mtrl-sci2021

Decoherence of V spin defects in monoisotopic hexagonal boron nitride

A. Haykal, R. Tanos, N. Minotto +11

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isoto…