Purcell enhancement of silicon W centers in circular Bragg grating cavities

Abstract

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction (${\eta }_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65\pm 10\%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.

References in corpus (12)

• Integrated Photonic Quantum Technologies
• Silicon Quantum Photonics
• On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability
• Three megahertz photon collection rate from an NV center with millisecond spin coherence
• Engineering telecom single-photon emitters in silicon for scalable quantum photonics
• Optical properties of an ensemble of G-centers in silicon
• Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities
• Bright Purcell enhanced single-photon source in the telecom O-band based on a quantum dot in a circular Bragg grating
• All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
• Purcell enhancement of single-photon emitters in silicon
• What is measured in a photoluminescence experiment on Quantum dots embedded in a large Purcell factor microcavity?
• High-efficiency single photon emission from a silicon T-center in a nanobeam

Cited by in corpus (5)

• Bright and Purcell-enhanced single photon emission from a silicon G center
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Micrometer-resolution fluorescence and lifetime mappings of CsPbBr${}_3$ nanocrystal films coupled with a TiO${}_2$ grating
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes