19 citations · 43 across the 4 of their papers we have counts for
4 papers
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Purcell enhancement of silicon W centers in circular Bragg grating cavities
Baptiste Lefaucher, Jean-Baptiste Jager, Vincent Calvo +11
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artifici…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…