2 papers
cond-mat.mtrl-sci2026
Growth and Morphology of InN Nanowires on Si<111> and Si<100> at Back-End-Of-Line Compatible Temperatures
Andrea Orlando-cunnac, Arthur Arnaud, Martien Den Hertog +4
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budge…
physics.optics2025
Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity
Baptiste Lefaucher, Yoann Baron, Jean-Baptiste Jager +8
We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. Th…