87 citations · 185 across the 5 of their papers we have counts for
5 papers
Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien +8
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based…
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Alban Gassenq, Kevin Guilloy, Nicolas Pauc +7
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge c…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
Spin injection in Silicon at zero magnetic field
L. Grenet, M. Jamet, P. Noé +7
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagne…