87 citations · 185 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2017
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Alban Gassenq, Kevin Guilloy, Nicolas Pauc +7
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge c…
cond-mat.mtrl-sci2017★ 87 cited
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…