High-efficiency single photon emission from a silicon T-center in a nanobeam

Abstract

Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state that has long coherence times. But this color center exhibits a long excited state lifetime which results in a low photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to collect over 70% of the T center emission directly into a single mode fiber. This efficiency enables us to directly demonstrate single photon emission from the zero phonon line, which represents the coherent emission from the T center. Our results represent an important step towards silicon-integrated spin-photon interfaces for quantum computing and quantum networks.

9 pages, 4 figures

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• Electrically-triggered spin-photon devices in silicon
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Efficient, indistinguishable telecom C-band photons using a tapered nanobeam
• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Silicon T centre hyperfine structure and memory protection schemes
• Spin-photon Qubits for Scalable Quantum Network