Bright and Purcell-enhanced single photon emission from a silicon G center
arXiv:2412.10603 · doi:10.1021/acs.nanolett.4c06405
Abstract
Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.
References in corpus (17)
- A silicon-integrated telecom photon-spin interface
- Broad diversity of near-infrared single-photon emitters in silicon
- Wafer-scale nanofabrication of telecom single-photon emitters in silicon
- Detection of single W-centers in silicon
- Engineering telecom single-photon emitters in silicon for scalable quantum photonics
- Optical properties of an ensemble of G-centers in silicon
- Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
- All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
- Cavity-coupled telecom atomic source in silicon
- Two-photon interference from independent cavity-coupled emitters on-a-chip
- Cavity enhanced emission from a silicon T center
- Indistinguishable photons from an artificial atom in silicon photonics
- Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
- High-efficiency single photon emission from a silicon T-center in a nanobeam
- Purcell enhancement of silicon W centers in circular Bragg grating cavities
- Genuine and faux single G centers in carbon-implanted silicon
- Distributed Quantum Computing in Silicon