Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring

Abstract

We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.

24 pages, 7 figures, submitted to an international journal with peer review

References in corpus (8)

• Integrated Photonic Quantum Technologies
• Silicon Quantum Photonics
• Broad diversity of near-infrared single-photon emitters in silicon
• Wafer-scale nanofabrication of telecom single-photon emitters in silicon
• Detection of single W-centers in silicon
• Engineering telecom single-photon emitters in silicon for scalable quantum photonics
• Optical properties of an ensemble of G-centers in silicon
• Identification of a telecom wavelength single photon emitter in silicon

Cited by in corpus (13)

• Purcell enhancement of single-photon emitters in silicon
• Cavity-coupled telecom atomic source in silicon
• Cavity enhanced emission from a silicon T center
• Indistinguishable photons from an artificial atom in silicon photonics
• Purcell enhancement of silicon W centers in circular Bragg grating cavities
• Genuine and faux single G centers in carbon-implanted silicon
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Radiative electronic bound states in the continuum from defects in semiconductors