514 citations · 2.2k across the 31 of their papers we have counts for
31 papers
Optical detection of the electron spin resonances of G centers in silicon
Félix Cache, Krithika V. R., Tobias Herzig +8
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-ba…
Investigation of the anatase-to-rutile transition for TiO sol-gel coatings with refractive index up to 2.7
Martin O'Byrne, Badre Kerzabi, Marco Abbarchi +7
This work describes the elaboration of rutile titanium dioxide films with high refractive indices and low scattering by sol-gel process and controlled crystallization. The evolutio…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Back-Propagation Optimization and Multi-Valued Artificial Neural Networks for Highly Vivid Structural Color Filter Metasurfaces
Arthur Clini de Souza, Stéphane Lanteri, Hugo Enrique Hernandez-Figueroa +4
We introduce a novel technique for designing color filter metasurfaces using a data-driven approach based on deep learning. Our innovative approach employs inverse design principle…
Strain engineering of the electronic states of silicon-based quantum emitters
A. Ristori, N. Granchi, F. Intonti +13
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom waveleng…