116 citations · 281 across the 7 of their papers we have counts for
7 papers
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…
Purcell enhancement of silicon W centers in circular Bragg grating cavities
Baptiste Lefaucher, Jean-Baptiste Jager, Vincent Calvo +11
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artifici…
Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J. -B. Jager, V. Calvo +13
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling betwee…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…
Detection of single W-centers in silicon
Yoann Baron, Alrik Durand, Péter Udvarhelyi +13
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…