1.4k citations · 3k across the 27 of their papers we have counts for
27 papers
Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure
Z. Mu, J. Fraunié, A. Durand +15
Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measu…
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
J. Plo, A. Pershin, S. Li +18
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and o…
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
T. Clua-Provost, Z. Mu, A. Durand +13
The negatively-charged boron vacancy (V) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) q…
Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
T. Clua-Provost, A. Durand, Z. Mu +12
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first…
Boron and nitrogen isotope effects on hexagonal boron nitride properties
E. Janzen, H. Schutte, J. Plo +8
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelec…
Optically-active spin defects in few-layer thick hexagonal boron nitride
A. Durand, T. Clua-Provost, F. Fabre +11
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to t…
Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
B. Lefaucher, J. -B. Jager, V. Calvo +13
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling betwee…
Magnetic imaging with spin defects in hexagonal boron nitride
P. Kumar, F. Fabre, A. Durand +13
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstr…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…
Detection of single W-centers in silicon
Yoann Baron, Alrik Durand, Péter Udvarhelyi +13
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts…
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli +10
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, build…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
Kamil Koronski, Agata Kaminska, Nikolai D. Zhigadlo +3
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emi…
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Debora Pierucci, Jihene Zribi, Hugo Henck +11
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or i…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…
Exciton-phonon interaction in the strong coupling regime in hexagonal boron nitride
T. Q. P. Vuong, G. Cassabois, P. Valvin +3
The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic l…
Efficient single photon emission from a high-purity hexagonal boron nitride crystal
L. J. Martínez, T. Pelini, V. Waselowski +4
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-act…
Hexagonal boron nitride is an indirect bandgap semiconductor
G. Cassabois, P. Valvin, B. Gil
Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high…
Unifying the low-temperature photoluminescence spectra of carbon nanotubes: the role of acoustic phonon confinement
Fabien Vialla, Yannick Chassagneux, Robson Ferreira +6
At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultra narrow lines in suspended nanotubes to broad a…
Photo-draining and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy
Hai Son Nguyen, Gregory Sallen, Marco Abbarchi +5
We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge…
Ultra-coherent single photon source
Hai Son Nguyen, Gregory Sallen, Christophe Voisin +3
We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the…
Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes
S. Berger, C. Voisin, G. Cassabois +3
We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments.…