1.4k citations · 3k across the 27 of their papers we have counts for
10 papers · 1 filter
Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure
Z. Mu, J. Fraunié, A. Durand +15
Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measu…
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
J. Plo, A. Pershin, S. Li +18
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and o…
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
T. Clua-Provost, Z. Mu, A. Durand +13
The negatively-charged boron vacancy (V) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) q…
Boron and nitrogen isotope effects on hexagonal boron nitride properties
E. Janzen, H. Schutte, J. Plo +8
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelec…
Magnetic imaging with spin defects in hexagonal boron nitride
P. Kumar, F. Fabre, A. Durand +13
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstr…
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
Kamil Koronski, Agata Kaminska, Nikolai D. Zhigadlo +3
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emi…
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Debora Pierucci, Jihene Zribi, Hugo Henck +11
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or i…
Exciton-phonon interaction in the strong coupling regime in hexagonal boron nitride
T. Q. P. Vuong, G. Cassabois, P. Valvin +3
The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic l…
Efficient single photon emission from a high-purity hexagonal boron nitride crystal
L. J. Martínez, T. Pelini, V. Waselowski +4
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-act…
Hexagonal boron nitride is an indirect bandgap semiconductor
G. Cassabois, P. Valvin, B. Gil
Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high…